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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5124 DESCRIPTION With TO-3PML package High voltage switchihg transistor APPLICATIONS Display horizontal deflection output Switching regulator and general purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 1500 800 6 Collector-base voltage Open emitter Collector-emitter voltage Open base Emitter-base voltage Open collector Collector current 10 Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 20 5 100 150 -55~150 UNIT V V V A A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5124 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; RBE= IC=8A;IB=2A IC=8A;IB=2A VCB=1200V; IE=0 VCB=1500V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=5V IC=8A ; VCE=5V 8 4 9 MIN 800 5 1.5 100 1 100 |I |I TYP. MAX UNIT V V V A mA A SYMBOL V(BR)CEO VCEsat VBEsat ICBO1 ICBO2 IEBO hFE-1 hFE-2 fT COB Switching times ton tstg tf TOR NDU ICO E SEM ANG INCH Transition frequency IE=-1A ; VCE=12V 3 Output capacitance VCB=10V;f=1MHz 130 Turn-on time 0.1 Storage time Fall time IC=6A;IB1=1.2A; IB2-=-2.4A RL=33.3| ;VCC=200V 4.0 0.2 MHz pF |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC5124 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC5124 TOR NDU ICO E SEM ANG INCH 4 |
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